Charged EVs | Renesas’ bidirectional 650 V GaN switch replaces back-to-back FETs with one 110 mΩ device
Renesas has introduced what it calls the industry’s first bidirectional 650 V-class GaN switch with integrated DC blocking, aimed at…
Renesas has introduced what it calls the industry’s first bidirectional 650 V-class GaN switch with integrated DC blocking, aimed at…
Renesas Electronics has announced three new 650 V high-voltage gallium nitride (GaN) field-effect transistors (FETs) developed specifically for e-mobility charging…